JPH0450746B2 - - Google Patents
Info
- Publication number
- JPH0450746B2 JPH0450746B2 JP57033339A JP3333982A JPH0450746B2 JP H0450746 B2 JPH0450746 B2 JP H0450746B2 JP 57033339 A JP57033339 A JP 57033339A JP 3333982 A JP3333982 A JP 3333982A JP H0450746 B2 JPH0450746 B2 JP H0450746B2
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- forming
- crystal semiconductor
- recess
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Recrystallisation Techniques (AREA)
- Element Separation (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3333982A JPS58151042A (ja) | 1982-03-03 | 1982-03-03 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3333982A JPS58151042A (ja) | 1982-03-03 | 1982-03-03 | 半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS58151042A JPS58151042A (ja) | 1983-09-08 |
JPH0450746B2 true JPH0450746B2 (en]) | 1992-08-17 |
Family
ID=12383803
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3333982A Granted JPS58151042A (ja) | 1982-03-03 | 1982-03-03 | 半導体装置の製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS58151042A (en]) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4387099B2 (ja) * | 2001-12-28 | 2009-12-16 | 株式会社半導体エネルギー研究所 | 半導体装置の生産方法 |
JP4011344B2 (ja) | 2001-12-28 | 2007-11-21 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP2004006644A (ja) * | 2002-01-28 | 2004-01-08 | Semiconductor Energy Lab Co Ltd | 半導体装置及びその作製方法 |
US7749818B2 (en) | 2002-01-28 | 2010-07-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacturing the same |
TWI272666B (en) | 2002-01-28 | 2007-02-01 | Semiconductor Energy Lab | Semiconductor device and method of manufacturing the same |
TWI261358B (en) | 2002-01-28 | 2006-09-01 | Semiconductor Energy Lab | Semiconductor device and method of manufacturing the same |
JP4137461B2 (ja) * | 2002-02-08 | 2008-08-20 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP4137460B2 (ja) | 2002-02-08 | 2008-08-20 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US6906343B2 (en) * | 2002-03-26 | 2005-06-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor display device |
JP4503246B2 (ja) * | 2002-06-25 | 2010-07-14 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5658269A (en) * | 1979-10-17 | 1981-05-21 | Seiko Epson Corp | Mos type semiconductor device |
-
1982
- 1982-03-03 JP JP3333982A patent/JPS58151042A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS58151042A (ja) | 1983-09-08 |
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